Infos 2005: Proceedings of the 14th Biennal Conference on Insulating Films on Semiconductors, June 22-24, 2005, Leuven, BelgiumGROESENEKEN, Guido; KACZER, Ben.Microelectronic engineering. 2005, Vol 80, issn 0167-9317, 491 p.Conference Proceedings

Alpha particle radiation effects in RF MEMS capacitive switchesRUAN, J; PAPANDREOU, E; LAMHAMDI, M et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1241-1244, issn 0026-2714, 4 p.Conference Paper

An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applicationsMARICAU, E; DE WIT, P; GIELEN, G et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1576-1580, issn 0026-2714, 5 p.Conference Paper

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniquesBOUYA, M; MALBERT, N; LABAT, N et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1366-1369, issn 0026-2714, 4 p.Conference Paper

Ball grid array (BGA) solder joint intermittency real-time detectionROTH, N; WONDRAK, W; WILLIKENS, A et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1155-1160, issn 0026-2714, 6 p.Conference Paper

Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing testsEL BROUJI, H; BRIAT, O; VINASSA, J.-M et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1473-1478, issn 0026-2714, 6 p.Conference Paper

Experimental evidence of latent gate oxide damages in medium voltage power MOSFET as a result of heavy ions exposureBUSATTO, G; CURRO, G; IANNUZZO, F et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1306-1309, issn 0026-2714, 4 p.Conference Paper

High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTsIANNUZZO, F.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1449-1452, issn 0026-2714, 4 p.Conference Paper

On the temperature dependence of NBTI recoveryAICHINGER, T; NELHIEBEL, M; GRASSER, T et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1178-1184, issn 0026-2714, 7 p.Conference Paper

Optimization of gate poly TAB size and reliability on short channel pMOSFETSEOK, Jung-Eun; KIM, Hyun-Joo; SEO, Jae-Yong et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1185-1188, issn 0026-2714, 4 p.Conference Paper

Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applicationsBOURQUI, M. L; BECHOU, L; GILARD, O et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1202-1207, issn 0026-2714, 6 p.Conference Paper

Reliability study of TaON capacitors : From leakage current characterization to ESD robustness predictionVERCHIANI, M; BOUYSSOU, E; FIANNACA, G et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1412-1416, issn 0026-2714, 5 p.Conference Paper

Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiationDESHAYES, Y; BORD, I; BARREAU, G et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1354-1360, issn 0026-2714, 7 p.Conference Paper

Systems-in-foil : Devices, fabrication processes and reliability issuesVAN DEN BRAND, J; DE BAETS, J; VAN MOL, T et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1123-1128, issn 0026-2714, 6 p.Conference Paper

Point defects at interfacial layers in stacks of (100)Ge with nm-thin HfO₂ and GeO_x(N_y) insulators probed by electron spin resonanceSTESMANS, A; AFANAS'EV, V. V.Microelectronic engineering. 2005, Vol 80, pp 22-25, issn 0167-9317, 4 p.Conference Paper

Characterization of interface state densities by photocurrent analysis : comparison of results for different insulator layersROMMEL, M; GROSS, M; ETTINGER, A et al.Microelectronic engineering. 2005, Vol 80, pp 50-53, issn 0167-9317, 4 p.Conference Paper

Analysis of defects at the interface between high-k thin films and (100) siliconJONES, B. J; BARKLIE, R. C.Microelectronic engineering. 2005, Vol 80, pp 74-77, issn 0167-9317, 4 p.Conference Paper

Laterally resolved electrical characterisation of high-K oxides with non-contact Atomic Force MicroscopySTURM, J. M; ZININE, A. I; WORMEESTER, H et al.Microelectronic engineering. 2005, Vol 80, pp 78-81, issn 0167-9317, 4 p.Conference Paper

Intrinsic band edge traps in nano-crystalline HfO₂ gate dielectricsLUCOVSKY, G; ZHANG, Y; LUNING, J et al.Microelectronic engineering. 2005, Vol 80, pp 110-113, issn 0167-9317, 4 p.Conference Paper

LaAlO₃ films prepared by MBE on LaAlO₃(001) and Si(001) substratesGAILLARD, S; ROZIER, Y; MERCKLING, C et al.Microelectronic engineering. 2005, Vol 80, pp 146-149, issn 0167-9317, 4 p.Conference Paper

Growth of gadolinium oxide films for advanced MOS structureLUPTAK, R; FRÖHLICH, K; ROSOVA, A et al.Microelectronic engineering. 2005, Vol 80, pp 154-157, issn 0167-9317, 4 p.Conference Paper

Advantages of HfAlON gate dielectric film for advanced low power CMOS applicationTORIUM, A; IWAMOTO, K; OTA, H et al.Microelectronic engineering. 2005, Vol 80, pp 190-197, issn 0167-9317, 8 p.Conference Paper

Performance and new effects in advanced SOI devices and materialsBALESTRA, Francis; JOMAAH, Jalal.Microelectronic engineering. 2005, Vol 80, pp 230-240, issn 0167-9317, 11 p.Conference Paper

Coupling effect between the front and back interfaces in thin SOI MOSFETsOHATA, A; CRISTOLOVEANU, S; VANDOOREN, A et al.Microelectronic engineering. 2005, Vol 80, pp 245-248, issn 0167-9317, 4 p.Conference Paper

Innovative technologies for high density non-volatile semiconductor memoriesBEZ, Roberto.Microelectronic engineering. 2005, Vol 80, pp 249-255, issn 0167-9317, 7 p.Conference Paper